Description: In the proposed Phase II project, MicroLink and its collaborator, Rochester Institute of Technology (RIT), will incorporate quantum dots (QDs) in the GaAs and InGaAs subcells of an InGaP/GaAs/InGaAs triple-junction solar cell to increase the radiation tolerance and thereby improve the end-of-life performance of the solar cell by >5%. The quantum dot solar cell will be grown in an inverted metamorphic (IMM) format on GaAs and will be compatible with MicroLink's epitaxial lift-off (ELO) process. The resulting solar cells will be lightweight, flexible, and radiation tolerant. Mechanically, they will resemble a sheet of thin metal foil. Innovative light management techniques such as reflective metal back contact and silver nanoparticle-enhanced reflectivity will be employed to increase absorption in the solar cell