Description: IntelliEPI IR, Inc. proposes to mature infrared detector technology using Type II Strained Layer Superlattice infrared photodetector based on Sb-capable multi-wafer Molecular Beam Epitaxy production for commercialization. In this proposed effort, IntelliEPI-IR will focus on advancing Type II SLS infrared photodetector technology for commercial, military and NASA FPA applications and IntelliEPI-IR will evolve imaging technology based on novel device architecture and advanced MBE growth technique. The materials produced under this effort will be advanced to higher readiness level consistent with customer requirements for commercial insertion and market development.