Description: The program aims to demonstrate a new genre of all-magnetic logic circuits which are radiation-tolerant and capable of reliable operation in extreme environmental conditions including low temperatures and wide temperature swings. The circuits are based on tunneling magnetoresistive technology, and are expected to have a greater single-event latchup immunity than semiconductor-based CMOS logic. Recent breakthroughs in magnetic tunnel junction technology have resulted in magnetoresistive responses in excess of 200%. With these developments adequate current gain may now be realized to implement practical multi-stage logic circuits. This work will seek to prove novel gate designs and explore the magnetic thin-film tunneling structures necessary to realize them.